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MSF10N80A Datasheet, PDF (2/8 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET | |||
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Bruckewell Technology Corp., Ltd.
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
RθJC Junction-to-Case
ââ
RθJA Junction-to-Ambient
ââ
Electrical Characteristics (Tc=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON)
On-Resistance
VDS=VGS,ID=250μA
VGS=10V,ID=4.5A
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
â³BVDSS Breakdown Voltage Temperature
/â³TJ Coefficient
VGS=0 V , ID=250μA
ID=250μA, Referenced to 25â
IDSS Zero Gate Voltage Drain Current
Gate-Body Leakage Current,
IGSSF
Forward
VDS=800V , VGS= 0 V
VDS=640V , VC= 125â
VGS=30V , VDS=0 V
Gate-Body Leakage Current,
IGSSR
Reverse
VGS=-30V , VDS=0 V
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
VDS=400 V, ID=10A,
RG=25Ω
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=640V,ID=10A,
VGS=10 V
Max.
4.0
62.5
Units
â/W
Min Type Max Units
3.0 ââ
5.0
V
ââ 1.05 1.4 Ω
800 ââ
ââ 1.0
ââ ââ
ââ ââ
ââ ââ
ââ
V
ââ V/â
10 μA
100 μA
100 nA
ââ ââ â100 nA
ââ 2200 ââ pF
ââ 180 ââ pF
ââ
15
ââ pF
ââ 60
--
ns
ââ 130
--
ns
ââ 110
--
ns
ââ 90
--
ns
ââ 46
--
nC
ââ
15
ââ nC
ââ
20
ââ nC
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