MSF10N80A Datasheet, PDF (1/8 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF10N80A
800V N-Channel MOSFET
FEATURES
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 46nC (Typ.)
Extended Safe Operating Area
Lower R_DS(ON) : 1.05 Ω (Typ.) @V_GS=10V
100% Avalanche Tested
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
d_v/d_t
P_D
Parameter
Drain-Source Voltage
Drain Current -Continuous (T_C=25℃)
Drain Current -Continuous (T_C=100℃)
Drain Current -Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C=25℃)
- Derate above 25℃
T_J,T_STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
T_L
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Bruckewell Technology Corp., Ltd.
Value
800
10
6
40
±30
900
9
24
4.0
60
0.48
–55 to + 150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃