MSF10N80 Datasheet, PDF (3/7 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF10N80
800V N-Channel MOSFET
Dynamic Characteristics
Symbol Parameter
t_d(on)
Turn-On Time
t_r
Turn-On Time
t_d(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
Min
--
V_DS = 400 V, I_D = 10 A,
--
R_G = 25 Ω
--
--
--
V_DS = 640 V,I_D = 10 A,
--
V_GS = 10 V
--
Typ.
Max. Units
60
--
ns
150
--
ns
110
--
ns
90
--
ns
46
--
nC
15
--
nC
20
--
nC
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
Min
I_S
Continuous Source-Drain Diode Forward Current
--
I_SM
Pulsed Source-Drain Diode Forward Current
--
V_SD
Source-Drain Diode Forward Voltage I_S = 10 A , V_GS = 0 V
--
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_S = 10 A , V_GS = 0 V
--
diF/dt = 100A/μs
--
Notes;
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=18mH, I_AS=10A, V_DD=5V, R_G=25Ω, Starting T_J=25℃
3. I_SD≦10A, di/dt≦200A/μs,V_DD≦BV_DSS, Starting T_J=25℃
4. Pulse Test: Pulse Width ≦ 300μs, Duty Cycle≦ 2%
5. Essentially Independent of Operating Temperature
Typ.
Max. Units
--
10
A
--
40
--
1.4
V
730
--
ns
12
--
μC
Publication Order Number: [MSF10N80]
© Bruckewell Technology Corporation Rev. A -2014