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MSF10N80 Datasheet, PDF (1/7 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET | |||
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MSF10N80
800V N-Channel MOSFET
Description
The MSF10N80 is a N-channel enhancement-mode
MOSFET , providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220F
package is universally preferred for all
commercial-industrial applications
Features
⢠100% EAS Test
⢠Rugged Gate Oxide Technology
⢠Extremely Low Intrinsic Capacitances
⢠Remarkable Switching Characteristics
⢠Unequalled Gate Charge: 10.5 nC (Typ.)
⢠Extended Safe Operating Area
Lower RDS(ON) : 5.5 Ω (Typ.) @VGS=10V
⢠RoHS compliant package
Application
⢠Power Factor Correction
⢠LCD TV Power
⢠Full and Half Bridge Power
Packing & Order Information
50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±30
V
Drain Current -Continuous (TC=25°C)
ID
Drain Current -Continuous (TC=100°C)
10
A
6.5
A
IDM
Drain Current Pulsed
40
A
EAS
Single Pulsed Avalanche Energy
960
mJ
EAR
Repetitive Avalanche Energy
24
mJ
Publication Order Number: [MSF10N80]
© Bruckewell Technology Corporation Rev. A -2014
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