MSF10N80 Datasheet, PDF (2/7 Pages) Bruckewell Technology LTD – 800V N-Channel MOSFET

MSF10N80
800V N-Channel MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Symbol
Parameter
dV/dt
Peak Diode Recovery dV/dt
Power Dissipation (TC = 25 °C)
P_D
- Derate above 25°C
T_J,T_STG
T_L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8'' from case for 5 seconds
• Drain current limited by maximum junction temperature
Value
4.0
60
0.48
-55 to +150
300
Unit
V/ns
W
W/°C
°C
°C
Thermal Resistance Characteristics
Symbol
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient
Parameter
Max.
0.52
40
Units
°C/W
On Characteristics
Symbol Parameter
V_GS
Gate Threshold Voltage
R_DS(ON)
Static Drain-Source On-Resistance
Test Conditions
V_DS = V_GS , I_D = 250μA
V_GS = 10 V , I_D = 5 A
Min
Typ.
Max. Units
3.0
--
5.0
V
--
0.9
1.1
Ω
Off Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown
V_GS = 0 V , I_D=250μA
800
Voltage
△BV_DSS
/△T_J
Breakdown Voltage
Temperature Coefficient
I_D = 250μA, Referenced to 25°C
--
I_DSS
Zero Gate Voltage Drain
Current
V_DS = 800 V , V_GS = 0 V
V_DS = 640 V , T_C = 125°C
--
Gate-Body Leakage
I_GSSF
Current, Forward
V_GS = 30 V , V_DS = 0 V
--
Gate-Body Leakage
I_GSSR
Current, Reverse
V_GS = -30 V , V_DS = 0 V
--
Typ.
Max. Units
--
--
V
1.0
--
V/°C
--
10
μA
100
--
100
nA
--
-100
nA
Dynamic Characteristics
Symbol Parameter
C_ISS
Input Capacitance
C_OSS
Output Capacitance
C_RSS
Reverse Transfer Capacitance
Publication Order Number: [MSF10N80]
Test Conditions
Min
Typ.
Max. Units
--
2200
--
pF
V_DS = 25 V, V_GS = 0 V,
--
190
--
pF
F = 1.0MHz
--
20
--
pF
© Bruckewell Technology Corporation Rev. A -2014