MSD30N94 Datasheet, PDF (3/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSD30N94
30V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol Parameter
Test Conditions
Min
Q_g
Total Gate Charge^3,4
--
Q_gs
Gate-Source Charge^3,4
V_DS = 15 V , I_D = 24 A,
V_GS = 4.5 V
--
Q_gd
Gate-Drain Charge^3,4
--
t_d(on)
Turn-On Delay Time^3,4
--
t_r
Rise Time^3,4
I_D = 15 A , R_G = 3.3 Ω,
--
t_d(off)
Turn-Off Delay Time^3,4
V_GS = 10 V , V_DD = 15 V
--
tf
Fall Time^3,4
--
C_ISS
Input Capacitance
--
C_OSS
Output Capacitance
V_DS = 15 V
f = 1 MHz , V_GS = 0 V
--
C_RSS
Reverse Transfer Capacitance
--
Rg
Total Gate Charge
V_DS = 0 V , f = 1 MHz , V_GS = 0 V
--
Typ.
24
4.2
13
12.6
19.5
42.8
13.2
2200
280
177
2
Max.
36
8
20
24
37
81
25
3300
410
260
4
Units
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter
Test Conditions
Min
Typ. Max. Units
I_S
Continuous Source Current
--
--
90
A
I_SM
Pulsed Source Current
V_G = V_D = 0 V , Force Current
--
--
360
A
V_SD
Diode Forward Voltage
V_GS = 0 V , I_S = 1 A , TJ = 25°C
--
--
1
V
trr
Reverse Recovery Time
V_DS = 3 0V, I_S = 1 A ,
ns
Qrr
Reverse Recovery Charge
di/dt=100A/μs , TJ=25°C
nC
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25Ω,Starting TJ=25℃.
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSD30N94]
© Bruckewell Technology Corporation Rev. A -2014