MSD30N94 Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSD30N94
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
• 30V, 90A, RDS(ON) =4mΩ@VGS = 10V
• Improved dv/dt capability
• Fast switching
• 100% EAS Guaranteed
• Green Device Available
• RoHS compliant package
Applications
• MB / VGA / Vcore
• POL Applications
• SMPS 2nd SR
TO-252 Package
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Publication Order Number: [MSD30N94]
© Bruckewell Technology Corporation Rev. A -2014