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| MSD30N94 Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs | |||
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MSD30N94
30V N-Channel MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current - Continuous (TC=25°C)
Drain Current - Continuous (TC=100°C)
IDM
Drain Current - Pulsed1
EAS
Single Pulse Avalanche Energy2
IAS
Single Pulse Avalanche Current2
Power Dissipation (TC=25°C)
PD
Power Dissipation - Derate above 25°C
TJ
TSTG
Storage Temperature Range
Operating Junction Temperature Range
Value
30
±20
90
57
360
125
50
88
0.59
-55 to +175
-55 to +175
Unit
V
V
A
A
A
mJ
A
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJc
Thermal Resistance Junction to ambient
RθJA
Thermal Resistance Junction to Case
Typ.
--
--
Max.
62
1.7
Units
°C/W
Electrical Characteristics (TJ=25 â, unless otherwise noted)
Static State Characteristics
Symbol Parameter
Test Conditions
Min
BVDSS
Drain-Source Breakdown Voltage VGS = VGS, ID = 250uA
30
â³BVDSS
/â³TJ
BVDSS Temperature Coefficient
Reference to 25°C , ID = 1mA
IGSS
Gate-Source Leakage Current
VDS = 0 V , VGS = ±20 V
IDSS
RDS(on)
VGS(th)
Drain-Source Leakage Current
Drain-Source On-Resistance3
Gate Threshold Voltage
VDS = 30 V , VGS = 0 V , TJ= 25°C
VDS = 24 V , VGS = 0 V , TJ= 125°C
VGS = 10 V, ID = 24 A
VGS = 4.5 V , ID = 12 A
VDS = VGS, ID =-250μA
1.2
â³VGS(th)
V GS(th) Temperature Coefficient
VDS = VGS, ID =-250μA
gfs
Forward Tranconductance
VDS = 10 V , ID = 10 A
Typ.
Max. Units
V
0.03
V/°C
±100 nA
1
uA
10
3.1
4
mΩ
4.5
6
1.6 2.5
V
-5
mV/°C
15.5
S
Guaranteed Avalanche Energy
Symbol Parameter
EAS
Single Pulse Avalanche Energy
Test Conditions
VDD = 25 V , L = 0.1Mh , IAS = 24 A
Min Typ. Max. Units
31
--
--
mJ
Publication Order Number: [MSD30N94]
© Bruckewell Technology Corporation Rev. A -2014
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