MSD2N60 Datasheet, PDF (3/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MSD2N60 600V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
I_S Continuous Source-Drain Diode Forward Current
I_SM Pulsed Source-Drain Diode Forward Current
V_SD Source-Drain Diode Forward Voltage I_S=2A, V_GS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
I_S=2 A , V_GS= 0V
di_F/dt=100A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤2.0A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
––
––
2.0
A
––
––
6.0
––
––
1.4
V
–– 230 –– ns
–– 1.0
–– μC
©Bruckewell Technology Corporation Rev. A -2012