MSD2N60 Datasheet, PDF (2/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MSD2N60 600V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
R_θJC
Junction-to-Case
––
R_θJA
Junction-to-Ambient
––
Electrical Characteristics (Tc=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
On Characteristics
V_GS Gate Threshold Voltage
Static Drain-Source
R_{DS(ON) On-Resistance}
V_DS=V_GS,I_D=250μA
V_GS=10V,I_D=1.0A
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
△BVDSS Breakdown Voltage Temperature
/△TJ Coefficient
I_DSS Zero Gate Voltage Drain Current
I_GSSF
I_GSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
V_GS=0 V , I_D=250μA
I_D=250μA, Referenced to 25℃
V_DS=600V , V_GS= 0 V
V_DS=480V , V_C= 125℃
V_GS=30V , V_DS=0 V
V_GS=-30V , V_DS=0 V
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
Switching Characteristics
t_d(on) Turn-On Time
t_r Turn-On Rise Time
t_d(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DS=25V, V_GS=0V,
f=1.0MHz
V_DS=300 V, I_D=2A,
R_G=25Ω
V_DS=480V,I_D=2A,
V_GS=10 V
Max.
2.87
50.0
Units
℃ /W
Min Type Max Units
2.0 ––
4.0
V
–– 4.0 4.7 Ω
600 ––
–– 0.6
–– ––
–– ––
–– ––
––
V
–– V/℃
10 μA
100 μA
100 nA
–– –– –100 nA
–– 320 420 pF
–– 35
46 pF
–– 4.5 6.0 pF
––
8
–– 23
–– 25
–– 28
–– 9.5
–– 1.6
–– 4.0
30 ns
60 ns
60 ns
70 ns
13 nC
–– nC
–– nC
©Bruckewell Technology Corporation Rev. A -2012