MSD2N60 Datasheet, PDF (1/9 Pages) Bruckewell Technology LTD – 600V N-Channel MOSFET

MSD2N60 600V N-Channel MOSFET
GENERAL DESCRIPTION
The MSD2N60 is a N-channel enhancement-mode MOSFET , providing
the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness. The TO-252 package is
universally preferred for all commercial-industrial applications
FEATURES
Originative New Design
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 9.5nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 4.0 Ω (Typ.) @VGS=10V
100% Avalanche Tested
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
E_AR
d_v/d_t
P_D
T_J,T_STG
T_L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
-Continuous (T_C=25℃)
-Continuous (T_C=100℃)
-Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C=25℃)
- Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
case for 5 seconds
 Drain current limited by maximum junction temperature
1/8'' from
Value
600
2
1.3
8.0
±30
120
5.4
4.5
23
0.18
–55 to + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
©Bruckewell Technology Corporation Rev. A -2012