MSC39N60X Datasheet, PDF (3/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSC39N60X
30V N-Channel MOSFETs
Dynamic and switching Characteristics
Symbol Parameter
Test Conditions
Min
Q_g
Total Gate Charge^3,4
--
Q_gs
Gate-Source Charge^3,4
V_DS = 15 V , I_D = 24 A,
V_GS = 4.5 V
--
Q_gd
Gate-Drain Charge^3,4
--
C_ISS
Input Capacitance
--
C_OSS
Output Capacitance
V_DS = 25 V
f = 1 MHz , V_GS = 0 V
--
C_RSS
Reverse Transfer Capacitance
--
Rg
Total Gate Charge
V_DS = 0 V , f = 1 MHz , V_GS = 0 V
--
Typ.
40
6
19
4800
735
420
1.6
Max.
75
12
35
8000
1300
800
3.5
Units
nC
nC
nC
pF
pF
pF
Ω
Drain-Source Diode Characteristics and Maximum Ratings
Symbol Parameter
Test Conditions
Min
Typ. Max. Units
I_S
Continuous Source Current
--
--
176
A
I_SM
Pulsed Source Current
V_G = V_D = 0 V , Force Current
--
--
352
A
V_SD
Diode Forward Voltage
V_GS = 0 V , I_S = 1 A , TJ = 25°C
--
--
1
V
trr
Reverse Recovery Time
V_DS = 30 V , I_S = 1 A ,
Qrr
Reverse Recovery Charge
di/dt=100A/μs , TJ=25°C
--
49
85
ns
--
18
35
nC
Note :
1.Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=65A., Starting TJ=25℃
3.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.Essentially independent of operating temperature.
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016