MSC39N60X Datasheet, PDF (2/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs

MSC39N60X
30V N-Channel MOSFETs
Absolute Maximum Ratings (T_A=25°C unless otherwise noted)
Symbol
Parameter
IAS
Single Pulse Avalanched Current²
Power Dissipation (T_C=25°C)
P_D
Power Dissipation - Derate above 25°C
T_J
Operating Junction Temperature Range
T_STG
Storage Temperature Range
Value
60
135
1.08
-55 to +150
-55 to +150
Unit
A
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_ΘjA
Thermal Resistance Junction to ambient
R_θJC
Thermal Resistance Junction to Case
Typ.
--
--
Max.
62
0.92
Units
°C/W
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol Parameter
Test Conditions
Min
BV_DSS
Drain-Source Breakdown Voltage _{VGS = VGS, ID = 250uA}
30
△BV_DSS
/△TJ
BVDSS Temperature Coefficient
Reference to 25°C , ID=1mA
I_GSS
Gate-Source Leakage Current
V_DS = 0 V , V_GS = ±20 V
I_DSS
Drain-Source Leakage Current
V_DS = 30 V , V_GS = 0 V , T_J= 25°C
V_DS = 24 V , V_GS = 0 V , T_J= 125°C
Typ.
Max. Units
V
0.03
V/°C
±100 nA
1
uA
10
On Characteristics
Symbol Parameter
R_DS(on)
Drain-Source On-Resistance³
V_GS(th)
△V_GS(th)
g_fs
Gate Threshold Voltage
V_GS(th) Temperature Coefficient
Forward Tranconductance
Test Conditions
V_GS = 10 V, I_D = 30 A
V_GS = 4.5 V , I_D = 15 A
V_DS = V_GS, I_D =-250μA
V_DS = V_GS, I_D =-250μA
V_DS = 10 V , I_D = 2 A
Min Typ. Max. Units
1.9 2.4
mΩ
2.5 3.3
1.2 1.6 2.5
V
-5
mV/°C
16.5
S
Dynamic and switching Characteristics
Symbol Parameter
t_d(on)
Turn-On Delay Time^3,4
t_r
Rise Time^3,4
t_d(off)
Turn-Off Delay Time^3,4
tf
Fall Time^3,4
Test Conditions
I_D = 1 A , R_G = 1 Ω,
V_GS = 10 V , V_DD = 15V
Min
Typ. Max. Units
--
20
40
ns
--
32
60
ns
--
75
130
ns
--
28
55
ns
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016