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MSC39N60X Datasheet, PDF (1/6 Pages) Bruckewell Technology LTD – 30V N-Channel MOSFETs | |||
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MSC39N60X
30V N-Channel MOSFETs
Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
Features
⢠30V,115A, RDS(ON) =2.4mΩ@VGS = 10V
⢠Improved dv/dt capability
⢠Fast switching
⢠100% EAS Guaranteed
⢠RoHS compliant package
Applications
⢠MB / VGA / Vcore
⢠POL Applications
⢠SMPS 2nd SR
PPAK5X6 Pin Configuration
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
IDM
EAS
Drain Current - Continuous (TC=25°C) (Chip Limitation)
Drain Current - Continuous (TC=100°C) (Chip Limitation)
Drain Current - Pulsed1
Single Pulse Avalanche Energy2
115
A
72
A
480
A
180
mJ
Publication Order Number: [MSC39N60X]
© Bruckewell Technology Corporation Rev. A -2016
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