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OPA2686 Datasheet, PDF (10/18 Pages) Burr-Brown (TI) – Dual, Wideband, Low Noise, Voltage Feedback OPERATIONAL AMPLIFIER
tion improved through the use of a diplexer line interface.
The differential receive signal is brought into the inverting
channel gain resistors to get both noise and distortion
improvement for a given desired gain setting. To get
impedance matching, set 2RG equal to the required load
looking out of the diplexer. The signal gain is then set by
adjusting feedback resistors, RF. Using the OPA2686 in the
inverting mode will give you a reduced noise gain as
described in the “Wideband, Inverting Gain Operation”
section of this data sheet. This will improve both the SNR
and distortion performance. If the noise gain for a particular
application drops below the minimum recommended stable
gain (+7), consider using the Low Gain Compensation
technique described later in this data sheet.
SINGLE-STAGE TRANSIMPEDANCE DESIGN
When setting up either one or both stages as a broadband
photodiode amplifier, the key elements in the design are the
expected diode capacitance (CD) with the reverse bias volt-
age (–VB) applied, the desired transimpedance gain RF, and
the GBP of the OPA2686 (1600MHz). Figure 3 shows a
design using a 10pF source capacitance diode and a 10kΩ
transimpedance gain. With these three variables set (and
including the parasitic input capacitance for the OPA2686
added to CD), the feedback capacitor value (CF) may be set
to control the frequency response.
+5V
Supply Decoupling
Not Shown
1/2
OPA2686
VO = ID RF
RF
10kΩ
λ
ID
CD
10pF
CF
–5V 0.3pF
–VB
FIGURE 3. Wideband, Low Noise, Transimpedance
Amplifier.
a parasitic capacitance of 0.2pF, leaving the required 0.3pF
value shown in Figure 3 to get the required feedback pole.
This will give a –3dB bandwidth approximately equal to:
f–3dB = √(GBP/2πRFCD)Hz
Eq. 2
The example of Figure 3 will give approximately 44MHz
flat bandwidth using the 0.3pF feedback compensation.
If the total output noise is bandlimited to a frequency less
than the feedback pole frequency, a very simple expression
for the equivalent input noise current can be derived as:
( ) IEQ =
I 2N
+
4kT
RF
+


EN
RF


2
+
EN 2πCDF
3
2
Eq. 3
Where:
IEQ = Equivalent input noise current if the output noise is
bandlimited to F < 1/(2πRFCD)
IN = Input current noise for the op amp inverting input
EN = Input voltage noise for the op amp
CD = Diode capacitance
F = Bandlimiting frequency in Hz (usually a post filter
prior to further signal processing)
Evaluating this expression up to the feedback pole fre-
quency at 31MHz for the circuit of Figure 3 gives an
equivalent input noise current of 2.6pA/√Hz. This is only
slightly higher than the current noise of the op amp itself.
TWO-STAGE TRANSIMPEDANCE DESIGN
The dual OPA2686 may be used as either a dual
transimpedance channel from two photodectors or as a very
high gain stage by using one amplifier as the transimpedance
stage with the second used as a post gain amplifier. Figure
4 shows an example of using one channel as a transimpedance
front end from a large area detector, with the second ampli-
fier used as a voltage gain stage to get a 100kΩ total gain
(ZT) from a large 50pF detector, (CD in Figure 4).
One key question in this design is how best to split up the
first and second stage gains. If bandwidth optimization from
a given photodetector capacitance (CD in Figure 4) is the
To achieve a maximally flat 2nd-order Butterworth fre-
quency response, the feedback pole should be set to:
1/(2πRFCF) = √(GBP/(4πRFCD))
Eq. 1
0.1µF
2.67kΩ
1/2
OPA2686
20Ω
1/2
OPA2686
Adding the common-mode and differential mode input ca-
pacitance (1.0 + 2.0)pF to the 10pF diode source capacitance
λ
of Figure 3, and targeting a 10kΩ transimpedance gain using
the 1600MHz GBP for the OPA2686, will require a feed-
CD
50pF
2.67kΩ
1.9pF
732Ω
20Ω
back pole set to 31MHz. This will require a total feedback
–VB
capacitance of 0.5pF. Typical surface-mount resistors have
FIGURE 4. High Gain, Wideband Transimpedance Amplifier.
®
OPA2686
10