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BS616LV2019 Datasheet, PDF (3/10 Pages) Brilliance Semiconductor – Very Low Power/Voltage CMOS SRAM 128K X 16 bit
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BSI
BS616LV2019
„ ABSOLUTE MAXIMUM RATINGS(1)
„ OPERATING RANGE
SYMBOL
V TERM
V cc
T BIAS
PARAMETER
Terminal Voltage with
Respect to GND
Power Supply
Temperature Under Bias
RATING
-0.5 to
Vcc+0.5
-0.5 to
Vcc+0.5
-40 to +85
UNITS
V
V
OC
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 O C to +70 O C
-40 O C to +85 O C
Vcc
2.7V ~ 3.6V
2.7V ~ 3.6V
T STG
Storage Temperature
-60 to +150
OC
PT
Power Dissipation
1.0
W
„ CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
I OUT
DC Output Current
20
mA
SYMBOL PARAMETER CONDITIONS MAX. UNIT
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
CIN
CDQ
Input
Capacitance
Input/Output
Capacitance
VIN=0V
VI/O=0V
6 pF
8 pF
sections of this specification is not implied. Exposure to absolute 1. This parameter is guaranteed and not 100% tested.
maximum rating conditions for extended periods may affect
reliability.
„ DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )
PARAMETER
NAME
VIL
VIH
PARAMETER
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
TEST CONDITIONS
Vcc =3.0V
Vcc =3.0V
MIN. TYP. (1) MAX. UNITS
-0.3
--
0.8
V
2.0
--
Vcc+0.3
V
IIL
Input Leakage Current Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
ILO
Output Leakage Current
Vcc = Max,CE = VIH or CE2 (4) = VIL or OE = VIH,
VI/O = 0V to Vcc
--
--
1
uA
VOL
Output Low Voltage
Vcc = Max, IOL = 2.0mA
Vcc =3.0V
--
--
0.4
V
VOH
Output High Voltage
Vcc = Min, IOH = -1.0mA
Vcc =3.0V
2.4
--
--
V
ICC(6)
Operating Power Supply CE = VIL, CE2(4) = VIH
Current
IDQ = 0mA, F = Fmax(3)
70ns
3.0 V
--
55ns
16
--
mA
25
ICCSB
Standby Current-TTL
CE=VIH or CE2(4)=VIL
IDQ = 0mA
Vcc =3.0V
--
--
0.5
mA
ICCSB1(5)
Standby Current-CMOS
CE≧Vcc-0.2V or CE2(4)≦0.2V,
VIN≧Vcc-0.2V or VIN≦0.2V
Vcc =3.0V
--
0.3
5.0
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC.
4. 48B BGA ignore CE2 condition.
6. Icc_Max. is 23mA(@55ns) / 15mA(@70ns) at Vcc=3.0V/ 0~70oC.
5.IccsB1_Max. is 3.0uA at Vcc=3.0V and TA=70oC.
„ DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
VDR
Vcc for Data Retention
ICCDR (4)
tCDR
tR
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3),
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V(3),
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
See Retention Waveform
1. Vcc = 1.5V, TA = + 25OC
3. 48B BGA ignore CE2 condition.
2. tRC = Read Cycle Time
4. IccDR is 0.7uA at TA=70oC.
MIN. TYP. (1)
1.5
--
--
0.1
0
--
TRC (2)
--
MAX.
--
1.0
--
--
UNITS
V
uA
ns
ns
R0201-BS616LV2019
3
Revision 1.2
May 2004
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