BU48 Datasheet, PDF (6/7 Pages) Bourns Electronic Solutions – NPN SILICON POWER TRANSISTORS

BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
4·0
TCP765AD
1·0
BUV48A
V_CE = 1000 V
0·1
BUV48
V_CE = 850 V
0·01
-80 -60 -40 -20 0 20 40 60 80 100 120 140
T_C - Case Temperature - °C
Figure 9.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAP765AA
10
1·0
t_p = 10 µs
t_p = 50 µs
0.1 ^{tp = 100 µs}
t_p = 500 µs
t_p = 1 ms
t_p = 2 ms
DC Operation
0·01
1·0
10
BUV48
BUV48A
100
V_CE - Collector-Emitter Voltage - V
Figure 10.
1000
PRODUCT INFORMATION
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.