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BU48 Datasheet, PDF (2/7 Pages) Bourns Electronic Solutions – NPN SILICON POWER TRANSISTORS
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BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
VCEO(sus) sustaining voltage
IC = 200 mA L = 25 mH
(see Note 2)
BUV48
400
BUV48A
450
VCE = 850 V VBE = 0
BUV48
0.2
Collector-emitter
ICES cut-off current
VCE = 1000 V
VCE = 850 V
VBE = 0
VBE = 0
TC = 125°C
BUV48A
BUV48
0.2
2.0
VCE = 1000 V VBE = 0
TC = 125°C
BUV48A
2.0
VCE = 850 V RBE = 10 Ω
BUV48
0.5
ICER
Collector-emitter
cut-off current
VCE = 1000 V
VCE = 850 V
RBE = 10 Ω
RBE = 10 Ω
TC = 125°C
BUV48A
BUV48
0.5
4.0
VCE = 1000 V RBE = 10 Ω
TC = 125°C
BUV48A
4.0
Emitter cut-off
IEBO
current
VEB = 5 V IC = 0
1
VEBO
Emitter-base
breakdown voltage
IE = 50 mA IC = 0
7
30
Collector-emitter
VCE(sat) saturation voltage
VBE(sat)
ft
Base-emitter
saturation voltage
Current gain
bandwidth product
IB =
IB =
IB =
IB =
IB =
IB =
VCE =
2A
3A
1.6 A
2.4 A
2A
1.6 A
10 V
IC = 10 A
IC = 15 A
IC = 8A
IC = 12 A
IC = 10 A
IC = 8A
IC = 0.5 A
BUV48
BUV48
(see Notes 3 and 4)
BUV48A
BUV48A
BUV48
(see Notes 3 and 4)
BUV48A
f = 1 MHz
1.5
5.0
1.5
5.0
1.6
1.6
10
Cob Output capacitance VCB = 20 V IC = 0
f = 1 MHz
150
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
MIN
ton Turn on time
ts
Storage time
tf
Fall time
ton Turn on time
ts
Storage time
tf
Fall time
IC = 10 A
IB(on) = 2 A
IC = 8 A
IB(on) = 1.6 A
VCC = 150 V
IB(off) = -2 A
VCC = 150 V
IB(off) = -1.6 A
BUV48
(see Figures 1 and 2)
BUV48A
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
1.0
3.0
0.8
1.0
3.0
0.8
UNIT
µs
µs
µs
µs
µs
µs
inductive-load-switching characteristics at 100°C case temperature
PARAMETER
tsv Voltage storage time IC = 10 A
tfi
Current fall time
VBE(off) = -5 V
tsv Voltage storage time IC = 8 A
tfi
Current fall time
VBE(off) = -5 V
TEST CONDITIONS †
IB(on) = 2 A
(see Figures 3 and 4)
IB(on) = 1.6 A
(see Figures 3 and 4)
BUV48
BUV48A
MIN TYP MAX UNIT
4.0
µs
0.4
µs
4.0
µs
0.4
µs
PRODUCT INFORMATION
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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