BU48 Datasheet, PDF (1/7 Pages) Bourns Electronic Solutions – NPN SILICON POWER TRANSISTORS

BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
● Rugged Triple-Diffused Planar Construction
● 15 A Continuous Collector Current
● 1000 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V_BE = 0 V)
Collector-emitter voltage (R_BE = 10 Ω)
Collector-emitter voltage (I_B = 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Non repetitive accidental peak surge current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE 1: This value applies for t_p ≤ 2 ms, duty cycle ≤ 2%.
BUV48
BUV48A
BUV48
BUV48A
BUV48
BUV48A
SYMBOL
V_CES
V_CER
V_CEO
I_C
I_CM
I_B
I_BM
I_CSM
P_tot
T_j
T_stg
VALUE
850
1000
850
1000
400
450
15
30
4
20
55
125
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
A
W
°C
°C
PRODUCT INFORMATION
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1