TIP35-S Datasheet, PDF (3/4 Pages) Bourns Electronic Solutions – Designed for Complementary Use with the TIP36 Series

TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
1000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS635AA
V_CE = 4 V
T_C = 25°C
t_p = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCS635AB
100
1·0
10
0·1
I_C = 25 A
1
0·1
OBSOLETE ^1·0
10
I_C - Collector Current - A
Figure 1.
I_C = 300 mA
I_C = 1 A
I_C = 3 A
0·01
100
0·001
0·01
0·1
1·0
I_B - Base Current - A
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
TCS635AC
2·0
V_CE = 4 V
T_C = 25°C
I_C = 20 A
I_C = 15 A
I_C = 10 A
10
100
1·8
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1·0
10
100
I_C - Collector Current - A
Figure 3.
PRODUCT INFORMATION
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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