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TIP35-S Datasheet, PDF (2/4 Pages) Bourns Electronic Solutions – Designed for Complementary Use with the TIP36 Series
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TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
TIP35
40
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
(see Note 5)
IB = 0
TIP35A
60
TIP35B
80
TIP35C
100
VCE = 80 V
VBE = 0
TIP35
0.7
Collector-emitter
ICES cut-off current
VCE = 100 V
VCE = 120 V
VBE = 0
VBE = 0
TIP35A
TIP35B
0.7
0.7
VCE = 140 V
VBE = 0
TIP35C
0.7
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
TIP35/35A
TIP35B/35C
1
1
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
1
Forward current
hFE
transfer ratio
VCE = 4 V
VCE = 4 V
IC = 1.5 A
IC = 15 A
25
(see Notes 5 and 6)
10
50
Collector-emitter
VCE(sat) saturation voltage
IB = 1.5 A
IB = 5 A
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
1.8
4
OBSOLETE Base-emitter
VBE
voltage
VCE = 4 V
VCE = 4 V
IC = 15 A
IC = 25 A
(see Notes 5 and 6)
2
4
Small signal forward
hfe
current transfer ratio VCE = 10 V
IC = 1 A
f = 1 kHz
25
|hfe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 1 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX
1
35.7
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = 15 A
VBE(off) = -4.15 V
IB(on) = 1.5 A
RL = 2 Ω
IB(off) = -1.5 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX
1.2
0.9
UNIT
V
mA
mA
mA
V
V
UNIT
°C/W
°C/W
UNIT
µs
µs
PRODUCT INFORMATION
2
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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