TIP35-S Datasheet, PDF (1/4 Pages) Bourns Electronic Solutions – Designed for Complementary Use with the TIP36 Series

TIP35, TIP35A, TIP35B, TIP35C
NPN SILICON POWER TRANSISTORS
● Designed for Complementary Use with the
TIP36 Series
● 125 W at 25°C Case Temperature
● 25 A Continuous Collector Current
● 40 A Peak Collector Current
● Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIP35
80
OBSOLETE ^{Collector-base voltage (IE = 0)}
Collector-emitter voltage (I_B = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
TIP35A
TIP35B
TIP35C
TIP35
TIP35A
TIP35B
TIP35C
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
P_tot
½LI_C²
T_j
T_stg
Lead temperature 3.2 mm from case for 10 seconds
T_L
100
V
120
140
40
60
V
80
100
5
V
25
A
40
A
5
A
125
W
3.5
W
90
mJ
-65 to +150
°C
-65 to +150
°C
250
°C
NOTES: 1. This value applies for t_p ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on) = 0.4 A, R_BE = 100 Ω,
V_BE(off) = 0, R_S = 0.1 Ω, V_CC = 20 V.
PRODUCT INFORMATION
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1