AT-32032 Datasheet, PDF (9/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 5 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.1
0.860
-19
23.8
15.523 160
-36.4
0.015
80
0.5
0.496
-67
18.8
8.705
114
-25.4
0.054
63
0.9
0.298
-90
14.9
5.569
92
-22.0
0.079
61
1.0
0.269
-96
14.1
5.067
88
-21.4
0.085
61
1.5
0.168
-119
11.0
3.558
71
-18.5
0.119
59
1.8
0.133
-135
9.7
3.046
63
-17.1
0.140
58
2.0
0.116
-146
8.9
2.782
58
-16.2
0.154
57
3.0
0.086
150
6.1
2.011
34
-12.7
0.232
48
4.0
0.121
98
4.3
1.640
13
-9.9
0.319
37
5.0
0.194
70
3.1
1.434
-6
-7.6
0.417
23
6.0
0.287
57
2.3
1.300
-25
-5.7
0.521
8
7.0
0.390
43
1.6
1.198
-44
-4.0
0.631
-10
8.0
0.491
28
0.8
1.101
-62
-2.8
0.722
-30
9.0
0.570
10
0
0.997
-79
-2.2
0.774
-51
10.0
0.640
-9
-1.0
0.891
-95
-2.1
0.781
-72
S₂₂
Mag
Ang
0.949
-9
0.690
-25
0.580
-28
0.570
-29
0.530
-33
0.514
-36
0.508
-39
0.483
-54
0.461
-72
0.422
-95
0.354
-124
0.274
-166
0.273
137
0.361
91
0.464
57
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 5 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
1.0
0.38
52
11.7
1.8
1.2
0.335
124
6.3
2.0
1.3
0.33
140
5.3
2.5
1.4
0.35
179
4.3
3.0
1.6
0.40
-146
5.9
3.5
1.8
0.47
-118
11.5
4.0
2.0
0.54
-92
22.0
G_assoc
dB
16.1
11.2
10.5
9.2
8.2
7.5
6.8
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
S₂₁
S₁₂
(k ± √k²â€“1)
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
25
1.25
20
1
15
0.75
10
0.5
5
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 14. Gain vs. Frequency at 5 V, 5 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)