AT-32032 Datasheet, PDF (6/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 5 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.5
0.484
-70
18.65
8.559
113
-25.51 0.053
62
0.75
0.344
-88
16.04
6.339
98
-23.25 0.069
61
1.0
0.257
-103
13.98
5.000
87
-21.46 0.085
61
1.5
0.165
-130
10.90
3.509
70
-18.59 0.118
60
2.0
0.124
-160
8.76
2.740
57
-16.29 0.153
57
3.0
0.112
143
5.93
1.979
33
-12.69 0.232
48
4.0
0.144
100
4.19
1.620
13
-9.89
0.320
37
5.0
0.209
72
3.01
1.414
-7
-7.55
0.419
24
6.0
0.296
57
2.14
1.279
-25
-5.58
0.526
8
7.0
0.394
43
1.43
1.179
-43
-3.94
0.636
-10
8.0
0.489
28
0.70
1.084
-61
-2.79
0.725
-30
9.0
0.564
10
-0.12
0.986
-78
-2.18
0.778
-50
10.0
0.627
-9
-1.05
0.886
-94
-2.10
0.786
-71
S₂₂
Mag
Ang
0.680
-26
0.602
-28
0.561
-29
0.522
-33
0.502
-39
0.477
-55
0.454
-73
0.418
-95
0.353
-124
0.275
-166
0.270
137
0.355
91
0.455
58
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 2.7 V, I_C = 5 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
0.9
0.23
71
7.5
1.8
1.2
0.295
138
5.1
2.0
1.2
0.31
152
4.6
2.5
1.3
0.35
-173
4.1
3.0
1.5
0.41
-142
5.8
3.5
1.7
0.47
-114
11.0
4.0
1.9
0.54
-93
20.0
G_assoc
dB
15.6
11.5
10.4
9.1
8.2
7.4
6.7
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG = ^S21 (k ± √k²â€“1)
S₁₂
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
25
1.25
20
1
15
0.75
10
0.5
5
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 11. Gain vs. Frequency at 2.7 V, 5 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)