AT-32032 Datasheet, PDF (10/14 Pages) AVAGO TECHNOLOGIES LIMITED – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32032 Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 10 mA
Freq.
S₁₁
GHz
Mag
Ang
dB
S₂₁
Mag
Ang
dB
S₁₂
Mag
Ang
0.1
0.751
-26
27.7
24.169 152
-37.1
0.014
78
0.5
0.322
-70
20.3
10.383 103
-26.4
0.048
68
0.9
0.181
-84
15.9
6.208
85
-22.1
0.078
68
1.0
0.160
-88
15.0
5.623
82
-21.3
0.086
67
1.5
0.094
-102
11.8
3.885
68
-18.1
0.125
64
1.8
0.068
-114
10.4
3.304
60
-16.5
0.149
61
2.0
0.055
-123
9.6
3.012
56
-15.6
0.165
59
3.0
0.032
146
6.7
2.161
34
-12.1
0.248
47
4.0
0.075
86
4.9
1.759
14
-9.5
0.334
34
5.0
0.148
67
3.7
1.538
-5
-7.5
0.424
20
6.0
0.243
58
2.9
1.397
-24
-5.7
0.517
5
7.0
0.354
47
2.2
1.292
-42
-4.3
0.613
-12
8.0
0.464
32
1.5
1.190
-61
-3.2
0.695
-31
9.0
0.555
14
0.7
1.083
-79
-2.5
0.751
-51
10.0
0.636
-5
-0.3
0.967
-96
-2.3
0.765
-71
S₂₂
Mag
Ang
0.898
-13
0.584
-24
0.514
-25
0.508
-26
0.483
-30
0.473
-34
0.468
-37
0.444
-52
0.419
-70
0.375
-92
0.301
-120
0.214
-162
0.214
136
0.311
89
0.426
57
AT-32032 Typical Noise Parameters,
Common Emitter, Z_O = 50 Ω, V_CE = 5 V, I_C = 10 mA
Freq.
F_min
Γ_opt
R_n
GHz
dB
Mag
Ang
ohms
0.9
1.1
0.29
69
10.0
1.8
1.3
0.25
143
6.1
2.0
1.4
0.26
159
5.6
2.5
1.5
0.31
-165
5.5
3.0
1.7
0.37
-133
8.1
3.5
1.9
0.45
-106
14.6
4.0
2.1
0.52
-84
25.7
G_assoc
dB
17.0
11.8
11.0
9.6
8.5
7.7
6.9
gmax = maximum available gain (MAG) if k > 1
gmax = maximum stable gain (MSG) if k < 1
k = stability factor
MAG =
S₂₁
S₁₂
(k ± √k²â€“1)
MSG = |S₂₁| /|S₁₂|
k
=
1
– |S₁₁| ² – |S₂₂|²
2*|S₁₂| |S₂₁|
+
|D|²
;
D
=
S₁₁S₂₂
–
S₁₂
S₂₁
25
1.25
20
1
15
0.75
10
0.5
5
gmax
dB(S[2,1])
0
k
01
2
3
4
5
FREQUENCY (GHz)
0.25
0
6
Figure 15. Gain vs. Frequency at 5 V, 10 mA.
Note: dB(|S ₂₁|) = 20 * log(|S₂₁|)
10