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| DEMO-AT32063 Datasheet, PDF (8/8 Pages) Broadcom Corporation. – Low Current, High Performance NPN Silicon Bipolar Transistor | |||
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Tape Dimensions
For Outline 63
P
P
P0
P0
D
D
P2
P2
E
F
W
E
F
W
D1
t1 (CARRIER TAPE THICKNESS)
D1
t1 (CARRIER TAPE THICKNESS)
8° MAX.
K0
5° MAX.
8° MAX.
A0
K0
B0
DESCRIPTION A0
SYMBOL SIZE (mm) SIZE (INCHES)
B0
CAVITY
CAVITY
LENGTH
A0
WIDTH
DEDPETSHCRIPTION
B0
K0
PITCLHENGTH
P
BOTWTOIDMTHHOLE DIAMETER
D1
PERFORATION
DIADMEETPETRH
D
PITCPHITCH
P0
POSBITOIOTNTOM HOLE DIAMETERE
CARRIER TAPE WIDTH
W
PERFORATION THICDKIANMESESTER
t1
PITCH
DISTANCE
C(WAIVDPITTOHYSDTITOIRIOEPCENRTIFOONR)ATION
F
2.24 ± 0.10
0.088 ± 0.004
2.34 ± 0.10
0.092 ± 0.004
SY1M.2B2O±L0.10 SIZE0.0(4m8m± )0.004 SIZE (INCHES)
41AB..000000
±
+
0.10
0.25
2.24 0±.105.71±0 0.004
2.34 0±.003.91+0 0.010
0.088
0.092
±
±
0.004
0.004
1K.505 ± 0.05 1.22 0±.006.11±0 0.002 0.048 ± 0.004
4P.00 ± 0.10 4.00 0±.105.71±0 0.004 0.157 ± 0.004
1D.715 ± 0.10 1.00 0+.006.92±50.004 0.039 + 0.010
80D..02055±±0.03.00113.55 00±..30011.500±±5
0.012
0.00050.061
±
0.002
P0
4.00 ± 0.10
0.157 ± 0.004
3E.50 ± 0.05 1.75 0±.103.81±0 0.002 0.069 ± 0.004
CARRIER TAPECAVWITIYDTTOH PERFORATION
P2
2W.00 ± 0.05 8.00 0±.007.93±0 0.002 0.315 ± 0.012
(LENTGHTICHKDNIREESCSTION)
t1
0.255 ± 0.013 0.010 ± 0.0005
DISTANCE
CAVITY TO PERFORATION
F
(WIDTH DIRECTION)
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
P2
2.00 ± 0.05
0.079 ± 0.002
(LENGTH DIRECTION)
5° MAX.
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Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved. Obsoletes 5989-2645EN
AV02-1456EN - June 9, 2009
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