DEMO-AT32063 Datasheet, PDF (2/8 Pages) Broadcom Corporation. – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32063 Absolute Maximum Ratings^[1]

Symbol
Parameter
Units
V_EBO
Emitter-Base Voltage
V
V_CBO
Collector-Base Voltage
V
V_CEO
Collector-Emitter Voltage
V
I_C
Collector Current
mA
P_T
Power Dissipation^[2,3]
mW
T_j
Junction Temperature
°C
T_STG
Storage Temperature
°C
Absolute
Maximum
1.5
11
5.5
32
150
150
-65 to 150
Thermal Resistance^[2]:
θ_jc = 370°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T_{Mounting Surface} = 25°C.
3. Derate at 2.7 mW/°C for T_C > 94.5°C.
4. 150 mW per device.
Electrical Specifications, T_A = 25°C
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
NF
Noise Figure; V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
dB
1.1^[2]
G_A
Associated Gain; V_CE = 2.7 V, I_C = 5 mA
f = 0.9 GHz
dB 12.5^[2] 14.5^[2]
h_FE
Forward Current Transfer Ratio; V_CE = 2.7 V, I_C = 5 mA
—
50
I_CBO
Collector Cutoff Current; V_CB = 3 V
µA
I_EBO
Noise Figure; V_EB = 1 V
µA
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB.
1.4^[2]
270
0.2
1.5
50
W = 10
L = 450
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (e = 4.3)
W = 20
L = 60
50
W = 10
L = 100
DIMENSIONS IN MILS
NOT TO SCALE
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.