DEMO-AT32063 Datasheet, PDF (3/8 Pages) Broadcom Corporation. – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32063 Characterization Information, T_A = 25°C
Symbol
Parameters and Test Conditions
P_{1 dB}
Power at 1 dB Gain Compression (opt tuning); V_CE = 2.7 V, I_C = 20 mA
G_{1 dB} Gain at 1 dB Gain Compression (opt tuning); V_CE = 2.7 V, I_C = 20 mA
IP₃
Output Third Order Intercept Point (opt tuning); V_CE = 2.7 V, I_C = 20 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
Units Typ.
dBm
12
dB
16
dBm
24
Typical Performance, T_A = 25°C
2.00
1.50
1.00
0.50
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
0
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs. Frequency and
Current at V_CE = 2.7 V.
20.0
15.0
10.0
5.0
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
0
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 3. Associated Gain at Optimum Noise Match
vs. Frequency and Current at V_CE = 2.7 V.
15
14
13
12
11
10
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 4. Power at 1 dB Gain Compression vs. Frequency
at V_CE = 2.7 V and I_C = 20 mA.
18
15
12
9
6
3
0
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs. Frequency at V_CE =
2.7 V and I_C = 20 mA.
25
20
15
10
2 mA
5
5 mA
10 mA
0
20 mA
0
0.5 1.0
1.5 2.0
2.5
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs. Frequency and Bias at
V_CE = 2.7 V, with Optimal Tuning.