K1050G Datasheet, PDF (5/5 Pages) Galaxy Semi-Conductor Holdings Limited – SIDAC

RATINGS AND CHARACTERISTIC CURVES
KG --- SERIES
100-250
VAC
60Hz
FIG.14 -- BASIC SIDAC CIRCUIT
VBO
IH
VBO
VBO
LOAD
120-145
CONDUCTION
ANGLE
IH
IH
LOAD CURRENT
FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC
(a) Circuit
R
(b) Waveforms
VBO
SIDAC
VDC(IN) VBO
Vc
VC
t
C
IL
RL IL
t
Rmax
Rmin
VIN-VBO
IBO
VIN-VTM
IH(MIN)
FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVE
VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS
INPUT
(See Note B)
2N6127
(or equivalent)
RBB1=150
50
50
RBB2=100
VBB1=10V
VBB2=0
+
-
VCE MONITOR
INPUT
VOLTAGE
0V
TIP-47
100mH
+
VCC=20V
-
IC MONITOR
5V
COLLECTOR
CURRENT
0.63 A
0
SIDAC VBO
COLLECTOR
CURRENT
RS=0.1
10 V
VCE(sat)
tw 3 ms
(See Note A)
tw
100 mS
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
Document Number 0290001
BLGALAXY ELECTRICAL
www.galaxycn.com
5.