English
Language : 

K1050G Datasheet, PDF (3/5 Pages) Galaxy Semi-Conductor Holdings Limited – SIDAC
RATINGS AND CHARACTERISTIC CURVES
KG --- SERIES
FIG.2 -- NORMALIZED DC HOLDING CURRENT vs
FFFFFFFFFFF CASE/LEAD TEMPERATURE
FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (ITRM)
GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES
2.0
1.5
1.0
.5
0 -40
-15
+25
+65
Case Temperature (TC) - ° C
+105 +125
FIG.4 -- MAXIMUM ALLOWABLE AMBIENT
FFFFFFFFFF FFTEMPERATURE vs ON-STATE CURRENT
di/dt Limit Line
600
ITRM
400
200
100
80
60
40
20
ff==11f=0k10H0kzkHHzRz eNpoenti-tiRonepFereaqteudencCWVyBuaOfr=vrFee5nifroTtiHnrJmgz=125otoC
l/f
Max
10
8
6
4
2
1
f=5 kHz
f=10 kHz
f=20 kHz
0.8
0.6
4 6 8 2 4 6 8 2 4 6 81
2 x 10-3 1 x 10-2
1 x 10-1
Pulse base width (to) - mSec.
FIG.5 -- NORMALIZED VBO CHANGE vs JUNCTION
JJJJJJJJJJJ TEMPERATURE
140
120
100
80
60
40
26
20
0
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
DO-15x
0.2
0.4
0.6
0.8
1.0
RMS On-State Current [IT(RMS)] - Amps
+4
+2
0
-2
-4
-6
-8
-10
-12
-40 -20 0
+25
+20 +40 +60 +80 +100 +120 +140
Junction Temperature (TJ) - ° C
FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVER
CURRENT vs JUNCTION TEMPERATURE
FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE
GGGGGGG(TYPICAL)
9
8
7
6
5
V=VBO
4
3
2
1
20 30
40 50 60 70 80 90 100 110120 130
Junction Temperature (TJ) - ° C
9
TL =25° C
8
7
6
5
4
3
2
1
Kxx01G
0
0 0.8 1.01.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6
Positive or Negative Instantaneous On-State Voltage (VT) - Volts
Document Number 0290001
BLGALAXY ELECTRICAL
www.galaxycn.com
3.