2SC2712_07 Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
2SC2712
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC021
Rev.A
www.galaxycn.com
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