2SC2712_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT process)

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
Pb
z Low noise：NF=1dB (Typ.),10 dB(Max). _Lead-free
z Complementary to 2SA1162.
z High voltage and high current.
z High h_FE linearity.
2SC2712
APPLICATIONS
z Audio frequency general purpose amplifier applications.
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SC2712
LO▪/LY▪/LG▪/LL▪
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_CBO
Collector-Base Voltage
60
V_CEO
Collector-Emitter Voltage
50
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current -Continuous
150
P_C
Collector Dissipation
150
T_j,T_stg
Junction and Storage Temperature
-55~125
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTC021
Rev.A
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