BCF080T Datasheet, PDF (2/6 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP

BCF060T
ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF Noise figure (Vds = 2V, Ids = 10 mA)
Ga Associated Gain ((Vds = 2V, Ids = 10 mA)
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHz
12 GHz
MINIMUM
23.0
22.6
10.5
8.0
TYPICAL
25.0
24.6
12.5
10.0
32
31
1.85
9.5
MAXIMUM UNIT
dBm
dB
%
dB
dB
ELECTRICAL CHARACTERISTIC (Vds = 6V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
P1dB Output Power @ P1dB (Vds = 6V, Ids = 50% Idss)
G1dB Gain @ P1dB (Vds = 6V, Ids = 50% Idss)
PAE PAE @ P1dB (Vds = 6V, Ids = 50% Idss)
NF Noise figure (Vds = 2V, Ids = 10 mA)
Ga Associated Gain ((Vds = 2V, Ids = 10 mA)
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHz
12 GHz
MINIMUM
22.5
22.3
10.2
7.8
TYPICAL
24.5
24.3
12.2
9.8
37
39
1.85
9.5
MAXIMUM UNIT
dBm
dB
%
dB
dB
MAXIMUM RATINGS (Ta = 25° C)
PARAMETERS
Vds Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids
Drain Current
Igsf
Forward Gate Current
Pin
Input Power
Tch
Channel Temperature
Tstg Storage Temperature
Pt
Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
15 mA
21 dBm
175° C
-60° C - 150° C
1.9 W
CONTINUOUS
8V
-4V
Idss
2.4 mA
@ 3dB compression
150° C
-60° C - 150° C
1.6 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device
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BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. [phone]
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3