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BCF080T Datasheet, PDF (1/6 Pages) BeRex Corporation – HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCF060T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm)
The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF060T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
• 25.0 dBm Typical Output Power
• 12.5 dB Typical Power Gain @ 12 GHz
• Low Phase Noise
• 0.3 X 600 Micron Recessed Gate
Applications
• Commercial
• Military / Hi-Rel
• Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNIT
Idss Saturated Drain Current (Vgs = 0V, Vds = 2V)
100
170
240
mA
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
70
100
mS
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
-3.5
-2.0
V
BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open)
-15
-11
V
BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open)
-10
-7
V
Rth Thermal Resistance (Au-Sn Eutectic Attach)
75
° C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3