BCL016B_16 Datasheet, PDF (1/5 Pages) BeRex Corporation – SUPER LOW NOISE PHEMT CHIP

BCL016B
SUPER LOW NOISE PHEMT CHIP (.15µm x 160µm)
The BeRex BCL016B is a GaAs super low noise pHEMT with a nominal 0.15 micron gate length and 160 micron gate
width making the product ideally suited for applications requiring very low noise and high associated gain. The
BCL016B offers high insertion gain and a low noise figure for broadband applications. The BCL016B is produced
using state of the art metallization with SI₃N₄ passivation and is screened to assure reliability
PRODUCT FEATURES
 Low 0.4dB typical noise figure @12 GHz
 High 13.5dB Typical associated Gain @12 GHz
 High P_in of up to 20dBm
 0.15 X 160 Micron Recessed Gate
APPLICATIONS
 Commercial
 Military / Hi-Rel.
 Test & Measurement
ELECTRICAL CHARACTERISTICS (T_a = 25°C)
SYMBOL
PARAMETER/TEST CONDITIONS
NF
Noise Figure (Vds = 2V, Id = 10mA)
G_A
P1dB
Associated Gain (Vds = 2V, Id = 10mA)
Output Power @ p1dB (Vds = 2V, Id = 10mA)
TEST
FREQ.
12 GHz
18 GHz
12 GHz
18 GHz
12 GHz
I_DSS
Saturated Drain Current (Vgs = 0V, Vds = 2V)
G_M
Transconductance (Vds = 2V, Vgs = -0.3V)
V_P
Pinch-off Voltage (Vds = 2V, Id = 200µA)
BV_GD Gate-Drain Breakdown Voltage, (Ig = -200 µA, source open)
BV_GS
Gate-Source Breakdown Voltage, (Ig = -200 µA, drain open)
R_TH
Thermal Resistance, junction to back side
(Au-Sn Eutectic Attach)
MIN.
12.5
10.5
13
TYPICAL
0.4
0.6
13.5
11.5
14.5
MAX. UNIT
dB
dB
dBm
50
mA
120
mS
-0.7
V
9
V
6
V
270
° C/W
BeRex
●website: www.berex.com
●email: [e-mail]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2016 BeRex
Rev. 2.1 A
PRELIMINARY