AT-41435G Datasheet, PDF (4/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41435 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V, I_C = 25 mA
Freq.       S₁₁
GHz
Mag. Ang.
dB
S₂₁
Mag. Ang.
dB
0.1
.63
-50
31.8
39.08 146
-40.0
0.5
.39
-137
22.9
13.97
99
-31.4
1.0
.36
-171
17.2
7.28
80
-27.1
1.5
.36
171
13.9
4.94
68
-23.5
2.0
.38
156
11.5
3.76
58
-21.6
2.5
.40
149
9.8
3.08
52
-19.6
3.0
.43
140
8.3
2.61
43
-18.3
3.5
.45
132
7.2
2.28
33
-16.8
4.0
.46
122
6.1
2.02
23
-15.6
4.5
.46
112
5.2
1.82
14
-14.6
5.0
.47
101
4.4
1.66
4
-13.7
5.5
.51
89
3.7
1.54
-5
-12.6
6.0
.58
79
3.0
1.41
-15
-11.8
A model for this device is available in the DEVICE MODELS section.
S₁₂      S₂₂
Mag. Ang.
Mag. Ang.
.010
83
.027
60
.044
67
.067
66
.083
63
.105
63
.122
64
.144
59
.165
55
.185
50
.207
45
.233
39
.257
33
.84
-18
.50
-26
.45
-26
.43
-30
.41
-34
.39
-38
.38
-47
.39
-57
.40
-67
.42
-75
.43
-81
.42
-89
.37
-101
AT-41435 Typical Scattering Parameters,
Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V, I_C = 10 mA
Freq.       S₁₁
GHz
Mag. Ang.
dB
S₂₁
Mag. Ang.
dB
0.1
.80
-32
28.0
24.99 157
-39.2
0.5
.50
-110
21.8
12.30 108
-29.6
1.0
.40
-152
16.6
6.73
85
-26.2
1.5
.38
-176
13.3
4.63
71
-24.0
2.0
.39
166
11.0
3.54
60
-21.9
2.5
.41
156
9.3
2.91
53
-20.4
3.0
.44
145
7.9
2.47
43
-18.8
3.5
.46
137
6.7
2.15
33
-17.5
4.0
.46
127
5.6
1.91
23
-16.0
4.5
.47
116
4.7
1.72
13
-15.0
5.0
.49
104
4.0
1.58
3
-13.9
5.5
.52
91
3.3
1.45
-7
-13.0
6.0
.59
81
2.5
1.34
-17
-12.1
AT-41435 Noise Parameters:
V_CE = 8 V, I_C = 10 mA
Freq.
NF_O
GHz
dB
0.1
1.2
0.5
1.2
1.0
1.3
2.0
1.7
4.0
3.0
Γ_opt
Mag
Ang
.12
3
.10
14
.05
28
.30
-154
.54
-118
R_N/50
0.17
0.17
0.17
0.16
0.35
S₁₂      S₂₂
Mag. Ang.
Mag. Ang.
.011
82
.93
-12
.033
52
.61
-28
.049
56
.51
-30
.063
59
.48
-32
.080
58
.46
-37
.095
61
.44
-40
.115
61
.43
-48
.133
58
.43
-58
.153
53
.45
-68
.178
50
.46
-75
.201
47
.48
-82
.224
40
.47
-89
.247
36
.43
-101