AT-41435G Datasheet, PDF (1/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41435
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Description
Avago’s AT-41435 is a general purpose NPN bipolar tran-
sistor that offers excellent high ­ frequency performance.
The AT‑41435 is housed in a cost effective surface mount
100 mil micro-X package. The 4 micron emitter-to-emitter
pitch enables this transistor to be used in many different
functions. The 14 emitter finger interdigitated geometry
yields an intermediate sized transistor with impedances
that are easy to match for low noise and moderate power
applications. This ­device is designed for use in low noise,
wideband amplifier, mixer and oscillator applications in the
VHF, UHF, and microwave frequencies. An optimum noise
match near 50Ω at 1 GHz, makes this device easy to use as
a low noise amplifier.
The AT-41435 bipolar transistor is fabricated using Avago’s
10 GHz f_T Self-Aligned-Transistor (SAT) ­process. The die is
nitride passivated for surface protection. Excellent device
uniformity, performance and reliability are produced by the
use of ion-implantation, self-alignment techniques, and gold
metalization in the fabrication of this device.
Features
• Low Noise Figure:
1.7 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
• High Associated Gain:
14.0 dB Typical at 2.0 GHz
10.0 dB Typical at 4.0 GHz
• High Gain-Bandwidth Product: 8.0 GHz Typical f_T
• Cost Effective Ceramic Microstrip Package
35 micro-X Package