AT-41435G Datasheet, PDF (2/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41435 Absolute Maximum Ratings

Symbol
Parameter
Units
V_EBO
Emitter-Base Voltage
V
V_CBO
Collector-Base Voltage
V
V_CEO
Collector-Emitter Voltage
V
I_C
Collector Current
mA
P_T
Power Dissipation^[2,3]
mW
T_j
Junction Temperature
°C
T_STG
Storage Temperature^[4]
°C
Absolute
Maximum^[1]
1.5
20
12
60
500
150
-65 to 150
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_case = 25°C.
3. Derate at 5 mW/°C for T_c > 100°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to
solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate
determination of θ_jc than do alternate methods. See MEASUREMENTS section
“Thermal Resistance” for more information.
Thermal Resistance ^[2,5]:
θ_jc = 200°C/W
Electrical Specifications, T_A = 25°C
Symbol Parameters and Test Conditions
Units
Min. Typ.
Max.
|S_21E|² Insertion Power Gain; V_CE = 8 V, I_C = 25 mA

f = 2.0 GHz
dB
11.5
f = 4.0 GHz
6.0
P_{1 dB}

Power Output @ 1 dB Gain Compression
V_CE = 8 V, I_C = 25 mA
G_{1 dB}
1 dB Compressed Gain; V_CE = 8 V, I_C = 25 mA

f = 2.0 GHz
dBm
19.0
f = 4.0 GHz
18.5
f = 2.0 GHz
dB
14.0
f = 4.0 GHz
9.5
NF_O
Optimum Noise Figure: V_CE = 8 V, I_C = 10 mA


f = 1.0 GHz
dB
1.3
f = 2.0 GHz
1.7
2.0
f = 4.0 GHz
3.0
G_A
Gain @ NF_O; V_CE = 8 V, I_C = 10 mA


f = 1.0 GHz
dB
18.5
f = 2.0 GHz
13.0 14.0
f = 4.0 GHz
10.0
f_T
Gain Bandwidth Product: V_CE = 8 V, I_C = 25 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 10 mA
I_CBO
Collector Cutoff Current; V_CB = 8 V
I_EBO
Emitter Cutoff Current; V_EB = 1 V
C_CB
Collector Base Capacitance^[1]: V_CB = 8 V, f = 1 MHz
GHz
8.0
—
30
150
270
µA
0.2
µA
1.0
pF
0.2
Note:
1. For this test, the emitter is grounded.