AT-64023 Datasheet, PDF (3/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023 Typical Performance, T_A = 25°C
29
18
28
27
150 mA
110 mA
26
25
24
70 mA
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression
vs. Frequency and Collector Current. V_CE = 16 V.
15
12
150 mA
9
110 mA
70 mA
6
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs. Frequency and
Collector Current. V_CE = 16 V.
30
P_OUT
25
20
40
h_T
15
30
10
20
5
10
0
0
0
5
10 15 20 25
POWER IN (dBm)
Figure 3. Output Power and Efficiency vs. Input
Power. V_CE = 16 V, I_C = 110 mA, f = 4.0 GHz.
35
30
25
MSG
20
15
MAG
10
|S_21E|²
5
0
0.1
0.3 0.5 1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
V_CE = 16 V, I_C = 110 mA.
Typical Scattering Parameters, Common Emitter, Z_O = 50Ω, T_A = 25°C, V_CE = 16 V, I_C = 110 mA
Freq.
S₁₁
S₂₁
S₁₂
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
0.1
.54
-124
28.2
25.71
135
-33.3
.022
42
0.5
.80
-178
17.6
7.57
78
-29.5
.034
18
1.0
.80
162
11.9
3.92
47
-28.6
.037
10
1.5
.80
147
8.6
2.70
21
-27.9
.040
12
2.0
.78
133
6.3
2.07
-4
-27.6
.042
1
2.5
.77
127
5.1
1.80
-24
-25.5
.053
-5
3.0
.73
116
3.8
1.56
-51
-25.0
.056
-20
3.5
.66
106
2.9
1.40
-79
-25.8
.051
-28
4.0
.60
99
2.2
1.28
-109
-27.2
.044
-49
4.5
.55
98
1.4
1.18
-141
-31.2
.028
-70
5.0
.54
99
0.6
1.07
-175
-40.9
.009
-144
S-parameters at other bias conditions are available on the Avago Design Pak disk.
S₂₂
Mag.
Ang.
.72
-51
.33
-119
.33
-142
.40
-156
.48
-169
.58
-178
.67
170
.78
156
.86
142
.93
127
.93
112