AT-64023 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023 Absolute Maximum Ratings
Symbol
V_EBO
V_CBO
V_CEO
I_C
P_T
T_j
T_STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation ^[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
W
°C
°C
Absolute
Maximum^[1]
2.2
40
20
200
3
200
-65 to 200
Thermal Resistance ^[2,4]:
θ_jc = 40°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. T_case = 25°C.
3. Derate at 25 mW/°C for T_c > 80°C.
4. The small spot size of this technique
results in a higher, though more
accurate determination of θ_jc than
do alternate methods. See MEASURE-
MENTS section “Thermal Resistance”
for more information.
Electrical Specifications, T_A = 25°C
Symbol Parameters and Test Conditions
Units Min. Typ.
|S_21E|² Insertion Power Gain; V_CE = 16 V, I_C = 110 mA
f = 2.0 GHz dB
6.5
f = 4.0 GHz
2.0
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 16 V, I_C = 110 mA
f = 2.0 GHz dBm
27.5
f= 4.0 GHz
25.5
26.5
G_{1 dB}
1 dB Compressed Gain; V_CE = 16 V, I_C = 110 mA
f = 2.0 GHz dB
f = 4.0 GHz
12.5
7.0
9.5
η_T
Total Efficiency^[1] at 1 dB Compression:
f = 4.0 GHz %
35.0
V_CE = 16 V, I_C = 110 mA
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 110 mA
I_CBO
Collector Cutoff Current; V_CB = 16 V
I_EBO
Emitter Cutoff Current; V_EB = 1 V
—
20
50
µA
µA
Note:
1. η_T = (RF Output Power)/(RF Input Power + V_CE I_C).
Max.
200
100
5.0