AT-64023 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64023
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Description
The AT-64023 is a high performance NPN silicon bipolar
transistor housed in a hermetic BeO flange package for
good thermal characteristics. This device is ­designed for
use in medium power, wide band amplifier and oscillator
applications operating over VHF, UHF and microwave
frequencies.
Excellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metallization in the fabrication of
these devices. The use of ion-implanted ballast resistors
ensures uniform current distribution through the multiple
emitter fingers.
230 mil BeO Package
Features
• High Output Power:
27.5 dBm Typical P_{1 dB} at 2.0 GHz
26.5 dBm Typical P_{1 dB} at 4.0 GHz
• High Gain at 1 dB Compression:
12.5 dB Typical G_{1 dB} at 2.0 GHz
9.5 dB Typical G_{1 dB} at 4.0 GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Stripline Package
Ground
Input
Output