AT-64020 Datasheet, PDF (3/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020 Typical Performance, T_A = 25°C
30
15
29
28
27
150 mA
110 mA
26
70 mA
25
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 1. Power Output @ 1 dB Gain Compression vs.
Frequency and Collector Current. V_CE = 16 V.
12
9
6
150 mA
110 mA
3
70 mA
1.0
2.0
3.0 4.0
FREQUENCY (GHz)
Figure 2. 1 dB Compressed Gain vs. Frequency and
Collector Current. V_CE = 16 V.
30
P_OUT
25
20
40
η_T
15
30
10
20
5
10
0
0
0 5 10 15 20 25
POWER IN (dBm)
Figure 3. Output Power and E ciency vs. Input Power.
V_CE = 16 V, I_C = 110 mA, f = 4.0 GHz.
35
30
25
MSG
20
15
MAG
MSG
10
|S21E|²
5
0
0.1
0.3 0.5 1.0
3.0 5.0
FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available
Gain and Maximum Stable Gain vs. Frequency.
V_CE = 16 V, I_C = 110 mA.
Typical Scattering Parameters, Common Emitter, Z_O = 50 Ω, T_A = 25°C, V_CE = 16 V, I_C = 110 mA
Freq.       S₁₁
GHz
Mag. Ang.
dB
S₂₁
Mag. Ang.
dB
S₁₂      S₂₂
Mag. Ang.
Mag. Ang.
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
.61
-116
30.0
31.51 130
.75
-173
18.4
8.27
86
.75
171
12.5
4.23
66
.74
159
9.2 2.90
50
.74
148
7.0 2.23
35
.73
141
5.2
1.82 26
.73
130
3.8
1.56
12
.74
119 2.7
1.37
-2
.73
107
1.8
1.23
-16
.72
93
0.9
1.11
-30
.71
79
0.1
1.01
-43
-33.1
.022
57
-28.8
.036
41
-27.4
.043
49
-23.5
.067
48
-21.6
.083
46
-19.8
.103
47
-17.5
.133
41
-16.1
.157
35
-14.7
.186 26
-13.3
.217
18
-11.8
.256
8
.67
-48
.23
-88
.20
-100
.21
-110
.25
-120
.27
-127
.32 -135
.35
-146
.38
-158
.41
-168
.42
179
A model for this device is available in the DEVICE MODELS section.