AT-64020 Datasheet, PDF (1/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020
Up to 4 GHz Linear Power Silicon Bipolar Transistor
Data Sheet
Description
Features
The AT-64020 is a high performance NPN silicon bipolar
transistor housed in a hermetic BeO disk package for
good thermal characteristics. This device is ­designed for
use in medium power, wide band amplifier and oscillator
applications operating over VHF, UHF and microwave
frequencies.
Excellent device uniformity, performance and reliability
are produced by the use of ion-implantation, self-
alignment techniques, and gold metallization in the
fabrication of these devices. The use of ion-implanted
ballast resistors ensures uniform current distribution
through the multiple emitter fingers.
• High Output Power:
27.5 dBm Typical P1 dB at 2.0 GHz
26.5 dBm Typical P1 dB at 4.0 GHz
• High Gain at 1 dB Compression:
10.0 dB Typical G1 dB at 2.0 GHz
6.5 dB Typical G1 dB at 4.0 GHz
• 35% Total Efficiency
• Emitter Ballast Resistors
• Hermetic, Metal/Beryllia Package
200 mil BeO Package