AT-64020 Datasheet, PDF (2/4 Pages) Agilent(Hewlett-Packard) – Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020 Absolute Maximum Ratings

Symbol
Parameter
Units
Absolute
Maximum^[1]
V_EBO
Emitter-Base Voltage
V 2
V_CBO
Collector-Base Voltage
V
40
V_CEO
Collector-Emitter Voltage
V 20
I_C
Collector Current
P_T
Power Dissipation ^[2,3]
mA 200
W
3
T_j
Junction Temperature
°C 200
T_STG
Storage Temperature
°C
-65 to 200
Thermal Resistance ^[2,4]:
θ_jc = 40°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. Tcase= 25°C.
3. Derate at 25 mW/°C for Tc > 80°C.
4. The small spot size of this technique results
in a higher, though more accurate determi-
nation of θjc than do alternate methods.
See MEASUREMENTS section “Thermal Re-
sistance” for more information.
Electrical Specifications, T_A = 25°C
Symbol
Parameters and Test Conditions^[1]
Units
Min.
Typ.
Max.
|S_21E|² Insertion Power Gain; V_CE = 16 V, I_C = 110 mA

f = 2.0 GHz
dB
7.0
f = 4.0 GHz 2.0
P_{1 dB}
Power Output @ 1 dB Gain Compression
V_CE = 16 V, I_C = 110 mA
G_{1 dB}
1 dB Compressed Gain; V_CE = 16 V, I_C = 110 mA

f = 2.0 GHz
dBm 26.5 27.5
f= 4.0 GHz 26.5
f = 2.0 GHz
dB
8.5
10.0
f = 4.0 GHz
6.5
η_T
Total Efficiency at 1 dB Compression:
V_CE = 16 V, I_C = 110 mA
f = 4.0 GHz
h_FE
Forward Current Transfer Ratio; V_CE = 8 V, I_C = 110 mA
I_CBO
Collector Cutoff Current; V_CB = 16 V
I_EBO
Emitter Cutoff Current; V_EB = 1 V
%
35.0
— 20
50 200
µA
100
µA
5.0
Note:
1. ηT = (RF Output Power)/(RF Input Power + VCEIC).