AT-41535 Datasheet, PDF (3/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

Typical Performance Curves at Tc = +25°C
24
21
18
15
12
9
6
3
0
0
Ga
NF _50Ω
NFo
1
2
3
4
Frequency (GHz)
16
14
12
10
8
6
4
2
0
5
Figure 1. Noise Figure and Associated Gain vs. Frequency. Vce = 8V, Ic = 10mA
24
2.0GHz
4.0GHz
20
16 _P1dB
12
G1dB
8
2.0GHz
4.0GHz
4
0
10
20
30
40
50
Ic (mA)
Figure 2. Output Power and 1dB Compression Gain vs. Collector Current and Fre-
quency. Vce = 8V.
16
15
14
Ga
13
12
11
10
9
NFo
8
7
0
10
20
30
Ic (mA)
9
8
10V
7
6V
4V
6
5
4
4V
6V
3
10V
2
1
0
40
50
Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Col-
lector Voltage. F = 2.0GHz.
40
35
30
MSG
25
20
MAG
15
10
|S21E| ²
5
0
0.1
1
10
Frequency (GHz)
Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain
vs. Frequency. Vce = 8V, Ic = 25mA
16
16
14
12
Ga
10
8
14
2.0GHz
12
10
4.0GHz ₈
6
4
NFo
2
4.0GHz ⁶
4
2.0GHz
2
0
0
0
10
20
30
40
50
Ic (mA)
Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Fre-
quency. Vce = 8V.
20
18
1.0 GHz
16
14
12
2.0 GHz
10
8
6
4.0 GHz
4
2
0
10
20
30
40
50
Ic (mA)
Figure 6. Insertion Power Gain vs. Collector Current and Frequency. Vce = 8V.