AT-41535 Datasheet, PDF (2/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

Table 1. Absolute Maximum Ratings _[1] at Tc = +25°C
Symbol Parameter
Unit
Max Rating
V_EBO
V_CBO
V_CEO
I_C
P_T
Tj
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation^[2]
Junction Temperature
V
1.5
V
20
V
12
mA
60
mW
500
°C
150
Tstg
Storage Temperature
°C
-60 to 150
qjc
Thermal Resistance^[5]
°C/W
125
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—CASE = 25°C
3. Derate at 8 mW/°C for Tc>87.5°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. Thermal Resistance is measured using IR Microscopy method.
Table 2. Electrical Specifications at Tc = +25°C, V_CE=8V
Symbol
|S_21E|²
Parameter and Test Condition
Insertion Power Gain; V_CE=8V, Ic=25mA
P1dB
G1dB
NFo
Power Output @1dB Gain Compression:
V_CE=8V, Ic=25 mA
1 dB Compressed Gain:
V_CE=8V, Ic=25 mA
Optimum Noise Figure:
V_CE=8V, Ic = 10 mA
G_A
Gain @ NFo ;
V_CE=8V, Ic=10mA
f_T
Gain Bandwidth Product: Ic = 25 mA
h_FE
Forward Current Transfer Ratio:
V_CE=8V, Ic = 10 mA
I_CBO
Collector Cutoff Current: V_CB = 8 V
I_EBO
Emitter Cutoff Current: V_EB = 1 V
C_cBO
Collector Base Capacitance^[1]:
V_CB=8V,F=1MHz
Notes:
1. For this test, the emitter is grounded.
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
Units Min.
dB
dBm
dB
dB
dB
13.0
GHz
-
30
uA
uA
pF
Typ.
Max.
11.0
5.5
19.0
18.5
14.0
9.0
1.30
1.70 2.0
3.00
18.0
14.0
10.0
8.0
180
270
0.2
1.0
0.20