AT-41535 Datasheet, PDF (1/5 Pages) AVAGO TECHNOLOGIES LIMITED – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41535
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Description/Applications
The AT-41535 of Avago Techologies is a general pur-
pose NPN bipolar transistor that offers excellent high
frequency performance. The AT-41535 is house in a cost
effective surface mount 100 mil micro-X package. The 4
micron emitter-to-emitter pitch enables this transistor
to be used in many different functions. The 15 emitter
fingers interdigitated geometry yields an intermediate
sized transistor with impedances that are easy to match
for low noise and moderate power applications. This
device is designed for use in low noise, wideband ampli-
fier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50 ??at 1GHz, makes this device easy to use as a low
noise amplifier.
The AT-41535 bipolar transistor is fabricated using Avago
Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT) pro-
cess. The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability
are produced by the use of ion implantation, self-align-
ment techniques, and gold metallization in the fabrica-
tion of this device.
Features
• Low Noise Figure :
- 1.7 dB typical at 2.0 GHz
- 3.0 dB typical at 4.0 GHz
• High Associated Gain
- 14.0 dB typical at 2.0GHz
- 10.0 dB typical at 4.0 GHz
• High Gain-Bandwidth Product
- 8.0 GHz typical fT
• Cost Effective Ceramic Micro-strip Package
35 micro-X Package