AMMC-5040 Datasheet, PDF (2/10 Pages) AVAGO TECHNOLOGIES LIMITED – 20-45 GHz GaAs Amplifier

AMMC-5040 DC Specifications/Physical Properties^[1]
Symbol
Parameters and Test Conditions
Units
Min. Typ. Max.
V_D1,2-3-4
Drain Supply Operating Voltage
V
2
4.5
5
I_D1
First Stage Drain Supply Current (V_DD = 4.5 V, V_G1 = -0.5 V)
mA
50
I_D2-3-4
Total Drain Supply Current for Stages 2, 3 and 4 (V_DD = 4.5 V, V_GG= -0.5 V)
mA
225
V_G1,2-3-4
Gate Supply Operating Voltages (I_DD = 300 mA)
V
-0.45
V_P
Pinch-off Voltage (V_DD = 4.5 V, I_DD < 10 mA)
V
-1.5
θ _ch-b
Thermal Resistance^[2] (Backside Temp. T_b = 25°C)
°C/W
49
Notes:
1. Measured in wafer form with T_chuck = 25°C (except θ _ch-bs.)
2. Channel-to-backside Thermal Resistance (θ_ch-b) = 58°C/W at T_channel (T_c) = 150°C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (T_b) = 25°C calculated from measured data.
RF Specifications^[3,4] (V_DD = 4.5V, I_DD (Q) = 300 mA, Z₀ = 50Ω)

Units
Broadband
Narrow Band Typical Performance

GHz 23– 40 21–24 27–29 37–40 40–45
Symbol Parameters and Test Conditions
Min. Typ.
Typical
|S₂₁|²
∆ |S₂₁|²
RL_in
RL_out
P_-1dB
Small-signal Gain
Small-signal Gain Flatness
Input Return Loss
Output Return Loss
Output Power @ 1 dB Gain Compression
f = 22 GHz
dB
20
25
dB
±1.5
dB
15
17
dB
8
11
dBm
19.5
25.5
25
22.4
21.3
±0.2
±0.4
±0.2
±1.2
17
18
21
17
10
14
13
13
20
22.5
21
20
P_-3dB
Output Power @ 3 dB Gain Compression, f = 22 GHz dBm
21
21.6
23.5
22.5
21.5
OIP3
Output 3^rd Order Intercept Point,
dBm
30
29
29
31
27
∆f = 2 MHz, P_in = -8 dBm, f = 22 GHz
|S₁₂|²
Isolation
dB
40
55
55
55
55
55
Notes:
3. Data measured in wafer form, T_chuck = 25°C.
4. 100% on-wafer RF test is done at frequency = 24, 27, 29, 37 and 40 GHz, except as noted.