AMMC-5040 Datasheet, PDF (1/10 Pages) AVAGO TECHNOLOGIES LIMITED – 20-45 GHz GaAs Amplifier

AMMC-5040
20 – 45 GHz GaAs Amplifier
Data Sheet
Description
The AMMC-5040 is a high gain broadband amplifier
designed for both military applications and commercial
communication systems. This four-stage amplifier has
input and output matching circuitry for use in 50 ohm
environments. It is fabricated using PHEMT integrated
circuit structures that provide exceptional broadband
performance. The backside of this chip is both RF and DC
ground. This simplifies the assembly process and reduces
assembly related performance variations and costs. For
improved reliability and moisture protection, the die is
passivated at the ­active areas. This MMIC is a cost effective
alternative to hybrid (discrete-FET) amplifiers that require
complex tuning and assembly process.
Features
• Frequency range: 20 – 45 GHz
• High gain: 25 dB
• Gain flatness: ±1.5 dB
• Return loss:
Input: 17 dB, Output: 11 dB
• Output power:
P_-1dB = 21 dBm at 38 GHz
P_-3dB = 22.5 dBm at 38 GHz
Applications
• Broadband gain block
• Broadband driver amplifier
• Point-to-point radio
• LMDS
• EW
• Instrumentation
• Frequency Multiplier (X2 and X3)
Chip Size:
1720 x 760 µm (67.7 x 29.9 mils)
Chip Size Tolerance: ±10 µm (±0.4 mils)
Chip Thickness:
100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 75 x 75 µm (3 ± 0.4 mils)
Absolute Maximum Ratings ^[1]
Symbol Parameters/Conditions
Units Min. Max.
V_D1,2-3-4
Drain Voltage
V
5
V_G1,2-3-4
Gate Voltage
V
-3.0 0.5
I_DD
Total Drain Current
mA
550
P_in
CW Input Power
dBm
21
T_ch
Operating Channel Temperature °C
+160
T_b
Operating Backside Temperature °C
-55 +75
T_stg
Storage Temperature
°C
-65 +165
T_max
Max. Assembly Temp (60 sec max) °C
+300
Notes:
1. Operation in excess of any one of these conditions may result in
permanent damage to this device.