THN6702F Datasheet, PDF (4/4 Pages) AUK corp – SiGe NPN Transistor

THN6702F
□ Test Circuit Schematic Diagram ( f = 460 MHz )
VBE
1 nF
100 pF
100 nH
RF IN _{100 pF}
W=1.3 mm
L=32 mm
W=1.3 mm
L=6.8 mm
W=1.3 mm
L=1.8 mm
13 pF
27 pF
100 pF
VCE
1 nF
0.5 X 1.5 X 6T
W=1.3 mm
L=16 mm
W=1.3 mm
L=31 mm 100 pF ^{RF OUT}
15 pF
□ Evaluation Board ( f = 460 MHz )
VBE
VCE
RF IN
RF OUT
Notes
1. FR4 glass epoxy: dielectric constant = 4.5, thickness = 0.8 mm
2. Evaluation board dimension = 119 ⅹ 50 mm²
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